ferroelectric domains造句

• _ based on the domain switching behavior of ferroelectrics , a model of " successive switching " for ferroelectric domains is introduced . this may help to avoid some of the intrinsic limitations of the " complete switching " hypothesis , and be a more physical representation
  其工作包括： ? ?在分析铁电材料电畴翻转基本特征的基础上，引入电畴的“连续翻转”模型，克服了“完全反转”假设对铁电特性描述的局限性，使电畴翻转模型的物理意义更为明确。
• Based on sndm technique , a method of local capacitance - voltage characteristic characterization of ferroelectric thin films was proposed . the effect of traps at oxide - semiconductor interface on metal - oxide - semiconductor structure capacitance - voltage curve was discussed , and the influence of coercive field to the capacitance - voltage characteristics of ferroelectric thin films was also discussed . the dynamic switching of ferroelectric domain in ca doping ( pb , la ) tio3 thin film was studied by sndm from the view of electricity
  利用sndm ,从纯电学的角度观察了plct薄膜中的电畴动态反转过程,由电畴横向扩张的移动速度的降低,发现了晶界在电畴反转过程中对畴壁移动的阻挡作用;根据sndm和pfm的在垂直方向上的不同信息敏感深度,得到plct薄膜中电畴反转过程中电畴是楔形畴;用pfm观察同一电畴在去掉外加反转电场后电畴的极化弛豫现象,结果表明空间电荷是发生极化弛豫的主要原因。